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fastSiC FF12190M2D
Manufacturer
Manufacturer Product Number
FF12190M2D
Description
SICFET N-CH 1200V 10.8A TO-220FP
Manufacturer Standard Lead Time 3 Days
Detailed Description
N-Channel 1200 V 10.8A (Tc) 51W (Tc) Through Hole TO-220-3 Full Pack
Datasheet View datasheet
Product Attributes
Type
Description
Manufacturer
fastSiC
Gate Charge (Qg) (Max) @ Vgs
27.2 nC @ 800 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 800 V
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
51W (Tc)
Qualification
AEC-Q101
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
10.8A (Tc)
Rds On (Max) @ Id, Vgs
240mOhm @ 4A, 15V
Vgs(th) (Max) @ Id
2.5V @ 6mA
Mounting Type
Through Hole
FET Feature
-
Supplier Device Package
TO-220-3 Full Pack
Package / Case
TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Vgs (Max)
+15V, -8V
Drain to Source Voltage (Vdss)
1200 V
Documents & Media
Resource Type
Link
Datasheets
Additional Resources
Attribute
Description
Part Number Alias
FF12190M2D
28528294
5700-FF12190M2D-ND
Availability
In Stock
Updated
5/16/2026
In-Stock: 1,000
Packaging Quantity Unit Price Ext Price
1 99.000 ₫ 99.000 ₫
99.000 ₫
All prices are shown in the selected currency
Tube · Digikey
Quantity Unit Price Ext Price
1
99.000 ₫
99.000 ₫
10
82.000 ₫
820.000 ₫
100
66.000 ₫
6.600.000 ₫
2,000
33.000 ₫
66.000.000 ₫
MOQ 1 · Order multiple 1