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GE Aerospace GE12090CDA3
Manufacturer
Manufacturer Product Number
GE12090CDA3
Description
MOSFET 2N-CH 1200V 875A MODULE
Manufacturer Standard Lead Time 10 Days
Detailed Description
MOSFET 2N-CH 1200V 875A MODULE
Datasheet View datasheet
Product Attributes
Type
Description
Manufacturer
GE Aerospace
Operating Temperature
-55°C ~ 175°C (TJ)
Qualification
AEC-Q101
Technology
Silicon Carbide (SiC)
Power - Max
2350W
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
875A
Input Capacitance (Ciss) (Max) @ Vds
58600pF @ 600V
Rds On (Max) @ Id, Vgs
2.19mOhm @ 950A, 20V
Vgs(th) (Max) @ Id
4.5V @ 320mA
Mounting Type
Chassis Mount
Supplier Device Package
Module
Package / Case
Module
Configuration
2 N-Channel (Half Bridge)
Documents & Media
Resource Type
Link
Datasheets
Additional Resources
Attribute
Description
Part Number Alias
GE12090CDA3
23019626
4014-GE12090CDA3-ND
Availability
In Stock
Updated
5/16/2026
In-Stock: 4
Packaging Quantity Unit Price Ext Price
1 111.412.000 ₫ 111.412.000 ₫
111.412.000 ₫
All prices are shown in the selected currency
Bulk · Digikey
Quantity Unit Price Ext Price
1
111.412.000 ₫
111.412.000 ₫
MOQ 1 · Order multiple 1