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GE Aerospace GE17080CDA3
Manufacturer
Manufacturer Product Number
GE17080CDA3
Description
MOSFET 2N-CH 1700V 765A MODULE
Manufacturer Standard Lead Time 10 Days
Detailed Description
MOSFET 2N-CH 1700V 765A MODULE
Datasheet View datasheet
Product Attributes
Type
Description
Manufacturer
GE Aerospace
Operating Temperature
-55°C ~ 175°C (TJ)
Qualification
AEC-Q101
Technology
Silicon Carbide (SiC)
Power - Max
2350W
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C
765A
Input Capacitance (Ciss) (Max) @ Vds
58000pF @ 900V
Rds On (Max) @ Id, Vgs
2.23mOhm @ 765A, 20V
Gate Charge (Qg) (Max) @ Vgs
2414nC @ 18V
Vgs(th) (Max) @ Id
4.5V @ 160mA
Mounting Type
Chassis Mount
FET Feature
-
Supplier Device Package
Module
Package / Case
Module
Configuration
2 N-Channel (Half Bridge)
Documents & Media
Resource Type
Link
Datasheets
Additional Resources
Attribute
Description
Part Number Alias
GE17080CDA3
16688529
4014-GE17080CDA3-ND
Availability
In Stock
Updated
5/16/2026
In-Stock: 5
Packaging Quantity Unit Price Ext Price
1 139.979.000 ₫ 139.979.000 ₫
139.979.000 ₫
All prices are shown in the selected currency
Bulk · Digikey
Quantity Unit Price Ext Price
1
139.979.000 ₫
139.979.000 ₫
MOQ 1 · Order multiple 1