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Infineon Technologies IPB65R660CFDAATMA1
Manufacturer
Manufacturer Product Number
IPB65R660CFDAATMA1
Description
MOSFET N-CH 650V 6A D2PAK
Manufacturer Standard Lead Time Contact us
Detailed Description
MOSFET N-CH 650V 6A D2PAK
Datasheet View datasheet
EDA/CAD Models
Product Attributes
Type
Description
Manufacturer
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
543 pF @ 100 V
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
62.5W (Tc)
Qualification
AEC-Q101
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
660mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Mounting Type
Surface Mount
FET Feature
-
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade
Automotive
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Documents & Media
Resource Type
Link
Datasheets
Simulation Models
Related Documents
Environmental Information
Featured Products
Additional Resources
Attribute
Description
Part Number Alias
IPB65R660CFDAATMA1
12718500
448-IPB65R660CFDAATMA1DKR-ND
Availability
Out of Stock
Updated
5/16/2026
In-Stock: 0
Packaging Quantity Unit Price Ext Price
1 69.000 ₫ 69.000 ₫
69.000 ₫
All prices are shown in the selected currency
Digi-Reel® · Digikey
Quantity Unit Price Ext Price
1
69.000 ₫
69.000 ₫
10
45.000 ₫
450.000 ₫
100
31.000 ₫
3.100.000 ₫
500
25.000 ₫
12.500.000 ₫
MOQ 1 · Order multiple 1
For Use With
AUIRS2181STR
IC GATE DRVR HALF-BRIDGE 8SOIC
55.000 ₫ Infineon Technologies
AUIRS2181STR
IC GATE DRVR HALF-BRIDGE 8SOIC
55.000 ₫ Infineon Technologies
AUIRS2181STR
IC GATE DRVR HALF-BRIDGE 8SOIC
55.000 ₫ Infineon Technologies
Substitutes
IXTA10N60P
MOSFET N-CH 600V 10A TO263
63.000 ₫ IXYS