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Infineon Technologies IPD65R660CFDAATMA1
Manufacturer
Manufacturer Product Number
IPD65R660CFDAATMA1
Description
MOSFET N-CH 650V 6A TO252-3
Manufacturer Standard Lead Time Contact us
Detailed Description
MOSFET N-CH 650V 6A TO252-3
Datasheet View datasheet
EDA/CAD Models
Product Attributes
Type
Description
Manufacturer
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
543 pF @ 100 V
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
62.5W (Tc)
Qualification
AEC-Q101
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
660mOhm @ 3.22A, 10V
Vgs(th) (Max) @ Id
4.5V @ 214.55µA
Mounting Type
Surface Mount
FET Feature
-
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Grade
Automotive
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Documents & Media
Resource Type
Link
Datasheets
Simulation Models
Related Documents
Environmental Information
Featured Products
Additional Resources
Attribute
Description
Part Number Alias
IPD65R660CFDAATMA1
12718456
448-IPD65R660CFDAATMA1DKR-ND
Availability
Out of Stock
Updated
5/16/2026
In-Stock: 0
Packaging Quantity Unit Price Ext Price
1 63.000 ₫ 63.000 ₫
63.000 ₫
All prices are shown in the selected currency
Digi-Reel® · Digikey
Quantity Unit Price Ext Price
1
63.000 ₫
63.000 ₫
10
41.000 ₫
410.000 ₫
100
28.000 ₫
2.800.000 ₫
500
22.000 ₫
11.000.000 ₫
1,000
21.000 ₫
21.000.000 ₫
MOQ 1 · Order multiple 1
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