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Infineon Technologies IPD80R2K7C3AATMA1
Manufacturer
Manufacturer Product Number
IPD80R2K7C3AATMA1
Description
MOSFET N-CH TO252-3
Manufacturer Standard Lead Time Contact us
Detailed Description
MOSFET N-CH TO252-3
Datasheet View datasheet
EDA/CAD Models
Product Attributes
Type
Description
Manufacturer
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 100 V
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
42W (Tc)
Qualification
AEC-Q101
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Rds On (Max) @ Id, Vgs
2.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Mounting Type
Surface Mount
FET Feature
-
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Grade
Automotive
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
800 V
Documents & Media
Resource Type
Link
Datasheets
EDA Models
Related Documents
Environmental Information
Featured Products
Additional Resources
Attribute
Description
Part Number Alias
IPD80R2K7C3AATMA1
12718489
448-IPD80R2K7C3AATMA1CT-ND
Availability
In Stock
Updated
5/16/2026
In-Stock: 393
Packaging Quantity Unit Price Ext Price
1 55.000 ₫ 55.000 ₫
55.000 ₫
All prices are shown in the selected currency
Cut Tape (CT) · Digikey
Quantity Unit Price Ext Price
1
55.000 ₫
55.000 ₫
10
35.000 ₫
350.000 ₫
100
24.000 ₫
2.400.000 ₫
500
19.000 ₫
9.500.000 ₫
1,000
17.000 ₫
17.000.000 ₫
MOQ 1 · Order multiple 1
For Use With
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AUIRS2181STR
IC GATE DRVR HALF-BRIDGE 8SOIC
55.000 ₫ Infineon Technologies
AUIRS2181STR
IC GATE DRVR HALF-BRIDGE 8SOIC
55.000 ₫ Infineon Technologies