Image shown is representative only. Exact specifications should be obtained from the product datasheet.
Inventchip IV1Q12080D7Z
Manufacturer
Manufacturer Product Number
IV1Q12080D7Z
Description
SIC MOSFET, 1200V 80MOHM, TO263-
Manufacturer Standard Lead Time Contact us
Detailed Description
N-Channel 1200 V 42A (Tc) 185.4W (Tc) Through Hole TO-263-7
Product Attributes
Type
Description
Manufacturer
Inventchip
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 800 V
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
185.4W (Tc)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
5V @ 3.11mA
Mounting Type
Through Hole
FET Feature
-
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab)
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs (Max)
+20V, -5V
Drain to Source Voltage (Vdss)
1200 V
Additional Resources
Attribute
Description
Part Number Alias
IV1Q12080D7Z
26254972
4084-IV1Q12080D7Z-ND
Availability
Out of Stock
Updated
5/16/2026
In-Stock: 0
Packaging Quantity Unit Price Ext Price
1 100.000 ₫ 100.000 ₫
100.000 ₫
All prices are shown in the selected currency
Tube · Digikey
Quantity Unit Price Ext Price
800
100.000 ₫
80.000.000 ₫
MOQ 800 · Order multiple 800