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Inventchip IV2Q06060D7Z
Manufacturer
Manufacturer Product Number
IV2Q06060D7Z
Description
GEN 2, SIC MOSFET, 650V 60MOHM,
Manufacturer Standard Lead Time Contact us
Detailed Description
N-Channel 650 V 50A (Tc) 174W (Tc) Through Hole TO-263-7
Datasheet View datasheet
Product Attributes
Type
Description
Manufacturer
Inventchip
Gate Charge (Qg) (Max) @ Vgs
94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 400 V
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
174W (Tc)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
78mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.5V @ 7.5mA
Mounting Type
Through Hole
FET Feature
-
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab)
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+20V, -5V
Drain to Source Voltage (Vdss)
650 V
Documents & Media
Resource Type
Link
Datasheets
Additional Resources
Attribute
Description
Part Number Alias
IV2Q06060D7Z
26254967
4084-IV2Q06060D7Z-ND
Availability
In Stock
Updated
5/16/2026
In-Stock: 60
Packaging Quantity Unit Price Ext Price
1 243.000 ₫ 243.000 ₫
243.000 ₫
All prices are shown in the selected currency
Strip · Digikey
Quantity Unit Price Ext Price
1
243.000 ₫
243.000 ₫
10
166.000 ₫
1.660.000 ₫
100
122.000 ₫
12.200.000 ₫
500
104.000 ₫
52.000.000 ₫
1,000
100.000 ₫
100.000.000 ₫
MOQ 1 · Order multiple 1