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NoMIS Power N3T080MP330
Manufacturer
Manufacturer Product Number
N3T080MP330
Description
3300 V 80 mOhm SiC MOSFET Bare D
Manufacturer Standard Lead Time 15 Days
Detailed Description
3300 V 80 mOhm SiC MOSFET Bare D
Datasheet View datasheet
Product Attributes
Type
Description
Manufacturer
NoMIS Power
Operating Temperature
-55°C ~ 175°C
Power Dissipation (Max)
288W (Tc)
Qualification
-
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
34A
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3V @ 10mA
Mounting Type
Through Hole
FET Feature
-
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs (Max)
+25V, -5V
Drain to Source Voltage (Vdss)
3300 V
Documents & Media
Resource Type
Link
Datasheets
Additional Resources
Attribute
Description
Part Number Alias
N3T080MP330
27524843
5140-N3T080MP330-ND
Availability
In Stock
Updated
5/16/2026
In-Stock: 1,000
Packaging Quantity Unit Price Ext Price
1 2.597.000 ₫ 2.597.000 ₫
2.597.000 ₫
All prices are shown in the selected currency
Tray · Digikey
Quantity Unit Price Ext Price
10
2.597.000 ₫
25.970.000 ₫
20
2.467.000 ₫
49.340.000 ₫
50
2.338.000 ₫
116.900.000 ₫
MOQ 10 · Order multiple 10
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