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PN Junction Semiconductor P3M12160K3
Manufacturer
Manufacturer Product Number
P3M12160K3
Description
SICFET N-CH 1200V 19A TO-247-3
Manufacturer Standard Lead Time Contact us
Detailed Description
N-Channel 1200 V 19A 110W Through Hole TO-247-3L
Datasheet View datasheet
Product Attributes
Type
Description
제조사
PN Junction Semiconductor
작동 온도
-55°C ~ 175°C (TJ)
전력 소비 (최대)
110W
인증
AEC-Q101
기술
SiCFET (Silicon Carbide)
FET 유형
N-Channel
전류 - 연속 드레인 (Id) @ 25°C
19A
Rds 온 (최대) @ Id, Vgs
192mOhm @ 10A, 15V
Vgs(th) (최대) @ Id
2.4V @ 2.5mA (Typ)
장착 유형
Through Hole
FET 특징
-
공급업체 디바이스 패키지
TO-247-3L
패키지/케이스
TO-247-3
등급
Automotive
구동 전압 (최대 Rds 온, 최소 Rds 온)
15V
Vgs (최대)
+21V, -8V
드레인-소스 전압 (Vdss)
1200 V
Documents & Media
Resource Type
Link
데이터시트
Additional Resources
Attribute
Description
부품 번호 별칭
P3M12160K3
16351573
재고 상태
품절
업데이트
2026. 5. 16.
In-Stock: 0
Packaging Quantity Unit Price Ext Price
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