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GE Aerospace GE12160CEA3
Manufacturer
Manufacturer Product Number
GE12160CEA3
Description
MOSFET 2N-CH 1200V 1.425KA MODUL
Manufacturer Standard Lead Time 10天
Detailed Description
MOSFET 2N-CH 1200V 1.425KA MODUL
Datasheet View datasheet
Product Attributes
Type
Description
制造商
GE Aerospace
工作温度
-55°C ~ 175°C (TJ)
认证
AEC-Q101
技术
Silicon Carbide (SiC)
功率 - 最大
3750W
漏源电压 (Vdss)
1200V (1.2kV)
电流 - 连续漏极电流 (Id) @ 25°C
1.425kA (Tc)
输入电容 (Ciss) (最大值) @ Vds
90000pF @ 600V
Rds 导通 (最大值) @ Id, Vgs
1.5mOhm @ 475A, 20V
栅极电荷 (Qg) (最大值) @ Vgs
3744nC @ 18V
Vgs(th) (最大值) @ Id
4.5V @ 480mA
安装类型
Chassis Mount
FET特性
-
供应商器件封装
Module
封装/外壳
Module
配置
2 N-Channel (Half Bridge)
Documents & Media
Resource Type
Link
数据手册
Additional Resources
Attribute
Description
料号别名
GE12160CEA3
16910634
4014-GE12160CEA3-ND
库存状态
有货
更新时间
2026/5/16
In-Stock: 12
Packaging Quantity Unit Price Ext Price
1 228.511.000 ₫ 228.511.000 ₫
228.511.000 ₫
All prices are shown in the selected currency
Bulk · Digikey
Quantity Unit Price Ext Price
1
228.511.000 ₫
228.511.000 ₫
最小起订量 1 · 订购倍数 1
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